鈥?/div>
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
1
0.4
鹵0.08
1.5
鹵0.1
4.5
鹵0.1
1.6
鹵0.2
1.5
鹵0.1
4.0
+0.25
鈥?.20
2.5
鹵0.1
3藲
0.4
鹵0.04
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Peak collector current
Total power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
I
CP
P
T
T
j
T
stg
Rating
20
20
0.7
1.5
1.0
150
鈭?5
to
+150
Unit
V
V
A
A
W
擄C
擄C
3.0
鹵0.15
45藲
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol: IC
Internal Connection
R
1
(1 k鈩?
B
R
2
(47 k鈩?
C
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
E
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
*
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
R
1
R
1
/R
2
f
T
V
CB
=
20 V, I
E
= 鈭?0
mA, f
=
200 MHz
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
1 mA, I
B
=
0
V
CB
=
15 V, I
E
=
0
V
CE
=
15 V, I
B
=
0
V
EB
=
14 V, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
I
C
=
500 mA, I
B
=
5 mA
0.7
0.016
1.0
0.021
55
800
Min
20
1
10
0.5
2 100
0.4
1.3
0.025
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
V
k鈩?/div>
錚?/div>
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2004
SJH00032BED
0.4 max.
2.6
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
3藲
1.0
+0.1
鈥?.2
3
2
0.5
鹵0.08
1
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